Touch display panel and method of manufacturing the same

ABSTRACT

A touch display panel including a thin-film transistor substrate including a thin-film transistor, a pixel defining layer disposed on the thin-film transistor substrate and including a first opening, a light emitting structure disposed in the first opening, a thin film encapsulation layer covering the light emitting structure and the pixel defining layer, a first metal pattern disposed on the thin film encapsulation layer, a first insulation pattern disposed on the first metal pattern and having the same shape as the first metal pattern in a plan view, a second metal pattern disposed on the first insulation pattern, and a second insulation layer disposed on the second metal pattern and the thin film encapsulation layer and covering the first metal pattern, the first insulation pattern and the second metal pattern.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from and the benefit of Korean PatentApplication No. 10-2016-0025435, filed on Mar. 3, 2016, which is herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND

Field

Exemplary embodiments relate to a touch display panel, and a method ofmanufacturing the touch display panel. More particularly, exemplaryembodiments relate to a touch display panel having a metal meshstructure, and a method of manufacturing the touch display panel.

Discussion of the Background

A mobile device, such as a smart-phone, may generally include a touchpanel sensor. The touch panel sensor may be classified into a capacitivetouch panel sensor, a resistive touch panel sensor, a light sensingtouch panel sensor, and etc. Recently, the capacitive touch panel sensorthat detects a change in capacitance caused by a touch of an externalelectric conductor, such as a finger, is widely used as the touch panelsensor.

Generally, a touch display panel includes a touch panel that may beformed on a display panel displaying an image. However, the process offorming the touch display panel may be complicated and have lowproductivity.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventive concept,and, therefore, it may contain information that does not form the priorart that is already known in this country to a person of ordinary skillin the art.

SUMMARY

Exemplary embodiments provide a touch display panel capable of improvingproductivity.

Exemplary embodiments also provide a method of manufacturing the touchdisplay panel.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concept.

According to an exemplary embodiment, a touch display panel includes athin-film transistor substrate including a thin-film transistor, a pixeldefining layer disposed on the thin-film transistor substrate andincluding a first opening, a light emitting structure disposed in thefirst opening, a thin film encapsulation layer covering the lightemitting structure and the pixel defining layer, a first metal patterndisposed on the thin film encapsulation layer, a first insulationpattern disposed on the first metal pattern and having the same shape asthe first metal pattern in a plan view, a second metal pattern disposedon the first insulation pattern, and a second insulation layer disposedon the second metal pattern and the thin film encapsulation layer andcovering the first metal pattern, the first insulation pattern and thesecond metal pattern.

The first metal pattern may overlap the pixel defining layer.

The second metal pattern may overlap the pixel defining layer.

A first contact hole may be formed through the first insulation patternand the second metal pattern may be electrically connected to the firstmetal pattern through the first contact hole.

The second insulation layer may include a second opening overlapping thelight emitting structure.

The first insulation pattern and the second insulation layer may includean inorganic insulation material.

The first insulation pattern and the second insulation layer may includean organic insulation material.

The touch display panel may include a touch area and a peripheral areaadjacent to the touch area, and a contacting pad disposed in theperipheral area. The second insulation layer may include a secondcontact hole exposing a portion of the contacting pad. The first andsecond metal pattern may be disposed in the touch area.

The touch display panel may further include a buffer pattern disposed onthe thin film encapsulation layer, in which the first metal pattern maybe disposed on the buffer pattern and have the same shape same as thebuffer pattern in a plan view.

According to an exemplary embodiment, a method of manufacturing a touchdisplay panel includes providing a thin-film transistor substrate,forming a pixel defining layer including a first opening on thethin-film transistor substrate, forming a light emitting structure inthe first opening, forming a thin film encapsulation layer covering thelight emitting structure and the pixel defining layer, forming a firstmetal layer and a first insulation layer on the thin film encapsulationlayer, forming a first photoresist pattern comprising a first portionhaving a first height and a second portion having a second height lessthan the first height on the first insulation layer, forming a firstmetal pattern and a first insulation pattern by patterning the firstmetal layer and the first insulation layer using the first photoresistpattern, and forming a second metal pattern on the thin filmencapsulation layer on which the first insulation pattern is formed.

Forming the first metal pattern and the first insulation pattern mayinclude patterning the first metal layer and the first insulation layermay using the first photoresist pattern as an etch barrier, such thatthe first metal pattern and the first insulation pattern have the sameshape in a plan view.

Forming the first metal pattern and the first insulation pattern mayfurther include removing a portion of the first photoresist pattern suchthat the second portion is removed while a portion of the first portionis remained, after forming the first metal pattern and the firstinsulation pattern, and etching the first insulation layer using theremaining portion of the first photoresist pattern as a mask, such thata first contact hole exposing the first metal pattern is formed.

The method may further include forming a second insulation layer on thesecond metal pattern.

The touch display panel may include a touch area and a peripheral areaadjacent to the touch area, and a contacting pad disposed in theperipheral area. The second insulation layer may include a secondcontact hole exposing the contacting pad. The first and second metalpatterns may be disposed in the touch area.

The first insulation pattern and the second insulation layer may includean inorganic insulation material.

The method may further include forming a second opening through thesecond insulation layer to overlap the light emitting structure.

The first insulation pattern and the second insulation layer may includean organic insulation material.

Forming the second insulation layer may include forming a photoresistlayer on a second metal layer forming the second metal pattern, andexposing and developing the photoresist layer, such that a secondopening that overlaps the light emitting structure is formed in thesecond insulation layer.

The method may further include forming a buffer layer on the thin filmencapsulation layer before forming the first metal layer, in whichforming the first metal pattern and the first insulation patternincludes patterning the buffer layer, the first metal layer, and thefirst insulation layer to form a buffer pattern, the first metalpattern, and the first insulation pattern may be formed.

The first and second metal patterns may overlap the pixel defininglayer.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concept, and, together with thedescription, serve to explain principles of the inventive concept.

FIG. 1 is a plan view illustrating a touch display panel according to anexemplary embodiment.

FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1.

FIG. 3 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

FIG. 4 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

FIG. 5 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, FIG. 6E, FIG. 6F, FIG. 6G, FIG. 6H,FIG. 6I, FIG. 6J, FIG. 6K, and FIG. 6L are cross-sectional viewsillustrating a method of manufacturing the touch display panel of FIG.2.

FIG. 7A, FIG. 7B, FIG. 7C, FIG. 7D, FIG. 7E, FIG. 7F, FIG. 7G, and FIG.7H are cross-sectional views illustrating a method of manufacturing thetouch display panel of FIG. 3.

FIG. 8A, FIG. 8B, and FIG. 8C are cross-sectional views illustrating amethod of manufacturing the touch display panel of FIG. 4.

FIG. 9A and FIG. 9B are cross-sectional views illustrating a method ofmanufacturing the touch display panel of FIG. 5.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. The regions illustrated in the drawings are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a plan view illustrating a touch display panel according to anexemplary embodiment. FIG. 2 is a cross-sectional view taken along aline I-I′ of FIG. 1.

Referring to FIGS. 1 and 2, a touch display panel 100 may include athin-film transistor substrate 110, a pixel electrode 112, a pixeldefining layer 114, a light emitting structure 120, a thin filmencapsulation layer 130, a buffer pattern 140, a first metal pattern150, a first insulation pattern 160, a second metal pattern 170, acontacting pad 172, and a second insulation layer 180.

The thin-film transistor substrate 110 may be a substrate includingthin-film transistors and signal lines for driving pixels to display animage. For example, the thin-film transistor substrate 110 may include abase substrate, the thin-film transistor, the signal line electricallyconnected to the thin-film transistor, and insulation layers. Thethin-film transistor substrate 110 may be a backplane substrate formedby a low temperature poly silicon (LTPS) process.

The pixel electrode 112 may be disposed to correspond to a pixel on thethin-film transistor substrate 110. The pixel electrode 112 may includea reflective material or a transmissive material in accordance with theemission type of the touch display apparatus. For example, the pixelelectrode 112 may include aluminum, alloy containing aluminum, aluminumnitride, silver, alloy containing silver, tungsten, tungsten nitride,copper, alloy containing copper, nickel, alloy containing nickel,chrome, chrome nitride, molybdenum, alloy containing molybdenum,titanium, titanium nitride, platinum, tantalum, tantalum nitride,neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tinoxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, andetc. These may be used alone or in a combination thereof. The pixelelectrode 112 may have a single layer structure or a multi-layerstructure, which may include a metal film, an alloy film, a metalnitride film, a conductive metal oxide film and/or a transparentconductive film.

The pixel defining layer 114 may be disposed on the thin-film transistorsubstrate 110 on which the pixel electrode 112 is disposed. The pixeldefining layer 114 may include an organic material or an inorganicmaterial. For example, the pixel defining layer 114 may be formed byusing photoresist, acryl-based resin, polyacryl-based resin,polyimide-based resin, a silicon compound, and etc. The pixel defininglayer 114 may define an opening which exposes a portion of the pixelelectrode 112.

The light emitting structure 120 may be disposed on a portion of thepixel electrode 112 exposed by the opening of the pixel defining layer114. The light emitting structure 120 may be formed by a laser inducedthermal imaging process, a printing process, etc. The light emittingstructure 120 may include an organic light emitting layer (EL), a holeinjection layer (HIL), a hole transfer layer (HTL), an electron transferlayer (ETL), an electron injection layer (EIL), etc. In exemplaryembodiments, the organic light emitting layer EL of the light emittingstructure 120 may include light emitting materials for generatingdifferent colors of light, such as a red color of light (R), a greencolor of light (G), and a blue color of light (B) in accordance with aposition of each pixel in the display apparatus. In some exemplaryembodiments, the organic light emitting layer EL of the of the lightemitting structure 120 may include a plurality of stacked light emittingmaterials that generates a red color of light, a green color of light,and a blue color of light, to emit a white color of light.

An opposite electrode (not shown) may be formed on the light emittingstructure 120. The opposite electrode may include a transmissivematerial or a reflective material in accordance with the emission typeof the touch display apparatus.

The thin film encapsulation layer 130 may be disposed on the lightemitting structure 120 and the pixel defining layer 114. The thin filmencapsulation layer 130 may prevent ambient air and moisture frompermeating into the transparent organic light emitting displayapparatus. The thin film encapsulation layer 130 may include aninorganic film, such as silicon oxide or silicon nitride film, and anorganic film, such as epoxy or polyimide film, which are alternately andrepeatedly formed. However, exemplary embodiments of the thin filmencapsulation layer 130 are not limited thereto, and any transparentthin film for sealing may be utilized. An upper surface of the thin filmencapsulation layer 130 may be flat.

The touch display panel 100 may include a touch area TA that may detecta touch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel 100. For example, theperipheral area PA is disposed adjacent to the touch area TA in a firstdirection D1, and extends in a second direction D2 substantiallyperpendicular to the first direction D1.

The buffer pattern 140 may be disposed on the thin film encapsulationlayer 130. The buffer pattern 140 may include an inorganic insulationmaterial. For example, the buffer pattern 140 may include silicon oxide(SiO_(x)), silicon nitride (SiN_(x)), etc. The buffer pattern 140 may bedisposed in the touch area TA of the touch display panel 100.Alternatively, the buffer pattern 140 may be omitted and the first metalpattern 150 may be disposed on the thin film encapsulation layer 130.

The first metal pattern 150 may be disposed on the buffer pattern 140.In a plan view, the first metal pattern 150 may have substantially thesame shape as the buffer pattern 140. The first metal pattern 150 may bedisposed to overlap the pixel defining layer 114. As such, even when thefirst metal pattern 150 is opaque, light emitting area of the lightemitting structure 120 may not be effected. The first metal pattern 150may have a metal mesh structure. For example, in a plan view, the firstmetal pattern 150 overlaps the pixel defining layer 114, and forms agrid along an extension direction of the pixel defining layer 114, suchthat the first metal pattern 150 has the metal mesh structure. The firstmetal pattern 150 may include metal such as gold (Au), silver (Ag),copper (Cu), nickel (Ni), iron (Fe), cobalt (Co), zinc (Zn), chromium(Cr), manganese (Mn), or combinations thereof.

The first insulation pattern 160 may be disposed on the first metalpattern 150. In a plan view, the first insulation pattern 160 may havesubstantially same shape as the first metal pattern 150. The firstinsulation pattern 160 may define a first contact hole CNT1 exposing thefirst metal pattern 150. The first insulation pattern 160 may include aninorganic insulation material. For example, the first insulation pattern160 may include silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), andetc.

The second metal pattern 170 may be disposed on the first insulationpattern 160. The second metal pattern 170 may be electrically connectedto the first metal pattern 150 through the first contact hole CNT1 ofthe first insulation pattern 160. The second metal pattern 170 mayinclude metal such as gold (Au), silver (Ag), copper (Cu), nickel (Ni),iron (Fe), cobalt (Co), zinc (Zn), chromium (Cr), manganese (Mn), orcombinations thereof.

The contacting pad 172 may be disposed on the thin film encapsulationlayer 130. The contacting pad 172 may be disposed in the peripheral areaPA. The contacting pad 172 may be electrically connected to the firstand second metal patterns 150 and 170, and electrically connected to anadditional driving circuit (not shown) to drive the touch display panel100. In addition, the contacting pad 172 may be electrically connectedto an electric circuit of the thin-film transistor substrate 110 througha contact hole (not shown) formed through the thin film encapsulationlayer 130. The contacting pad 172 may be formed from the same layer asthe second metal pattern 170. Thus, the contacting pad 172 may includethe same material as the second metal pattern 170.

The second insulation layer 180 may be disposed on the thin filmencapsulation layer 130, on which the second metal pattern 170 and thecontacting pad 172 are disposed. The second insulation layer 180 maycover both the first metal pattern 150 and the second metal pattern 170in the touch area TA. The second insulation layer 180 may define asecond contact hole CNT2 which exposes the contacting pad 172 in theperipheral area PA. The driving circuit may be electrically connected toa touch circuit of the touch display panel 100 through the secondcontact hole CNT2. The second insulation layer 180 may include aninorganic insulation material. For example, the second insulation layer180 may include silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), andetc.

The first metal pattern 150 and the second metal pattern 170 may beconnected or disconnected to each other at appropriate positions toconstitute a touch circuit, which may include touch electrodes, adriving line, and a sensing line for touch position sensing.

According to an exemplary embodiment, the touch display panel 100includes the buffer pattern 140, the first metal pattern 150, and thefirst insulation pattern 160, which have the same shape in a plan view.Thus, the touch display panel 100 has a simple structure as compared toa conventional touch display panel that may include a buffer pattern, afirst metal pattern, and a first insulation pattern that are formed fromdifferent masks and have different shapes from each other. Accordingly,the touch display panel 100 according to an exemplary embodiment mayimprove productivity from its simple structure.

FIG. 3 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

Referring to FIG. 3, the touch display panel is substantially same asthe touch display panel of FIGS. 1 and 2, except for a first insulationpattern 260 and a second insulation layer 280. Thus, detaileddescriptions with respect to the substantially same elements will bebriefly explained or omitted.

The touch display panel may include a thin-film transistor substrate210, a pixel electrode 212, a pixel defining layer 214, a light emittingstructure 220, a thin film encapsulation layer 230, a buffer pattern240, a first metal pattern 250, a first insulation pattern 260, a secondmetal pattern 270, a contacting pad 272, and a second insulation layer280.

The thin-film transistor substrate 210 may be a substrate includingthin-film transistors and signal lines for driving pixels to display animage. The pixel electrode 212 may be disposed to correspond to a pixelon the thin-film transistor substrate 210. The pixel defining layer 214may be disposed on the thin-film transistor substrate 210 on which thepixel electrode 212 is disposed. The light emitting structure 220 may bedisposed on a portion of the pixel electrode 212 exposed by an openingof the pixel defining layer 214. The thin film encapsulation layer 230may be disposed on the light emitting structure 220 and the pixeldefining layer 214.

The buffer pattern 240 may be disposed on the thin film encapsulationlayer 230. The buffer pattern 240 may include an inorganic insulationmaterial. For example, the buffer pattern 240 may include silicon oxide(SiO_(x)), silicon nitride (SiN_(x)), and etc. The buffer pattern 240may be disposed in a touch area TA of the touch display panel.Alternatively, the buffer pattern 240 may be omitted and the first metalpattern 250 may be disposed on the thin film encapsulation layer 230.

The touch display panel may include the touch area TA that may detect atouch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel.

The first metal pattern 250 may be disposed on the buffer pattern 240.In a plan view, the first metal pattern 250 may have substantially thesame shape as the buffer pattern 240. The first metal pattern 250 may bedisposed to overlap the pixel defining layer 214. The first metalpattern 250 may have a metal mesh structure. The first metal pattern 250may include metal such as gold (Au), silver (Ag), copper (Cu), nickel(Ni), iron (Fe), cobalt (Co), zinc (Zn), chromium (Cr), manganese (Mn),or combinations thereof.

The first insulation pattern 260 may be disposed on the first metalpattern 250. In a plan view, the first insulation pattern 260 may havesubstantially the same shape as the first metal pattern 250. The firstinsulation pattern 260 may define a first contact hole CNT1 exposing thefirst metal pattern 250. The first insulation pattern 260 may include anorganic insulation material. For example, the first insulation pattern260 may include photoresist, acryl-based resin, polyimide-based resin,polyamide-based resin, siloxane-based resin, and etc. These may be usedalone or in a combination thereof.

The second metal pattern 270 may be disposed on the first insulationpattern 260. The second metal pattern 270 may be electrically connectedto the first metal pattern 250 through the first contact hole CNT1 ofthe first insulation pattern 260. The second metal pattern 170 mayinclude metal such as gold (Au), silver (Ag), copper (Cu), nickel (Ni),iron (Fe), cobalt (Co), zinc (Zn), chromium (Cr), manganese (Mn), orcombinations thereof.

The contacting pad 272 may be disposed on the thin film encapsulationlayer 230. The contacting pad 272 may be disposed in the peripheral areaPA. The contacting pad 272 may be formed from the same layer as thesecond metal pattern 270. As such, the contacting pad 272 may includethe same material as the second metal pattern 270.

The second insulation layer 280 may be disposed on the thin filmencapsulation layer 230 on which the second metal pattern 270 and thecontacting pad 272 are disposed. The second insulation layer 280 maycover both the first metal pattern 250 and the second metal pattern 270in the touch area TA. The second insulation layer 280 may define asecond contact hole CNT2 which exposes the contacting pad 272 in theperipheral area PA. The second insulation layer 280 may include anorganic insulation material. For example, the second insulation layer280 may include photoresist, acryl-based resin, polyimide-based resin,polyamide-based resin, siloxane-based resin, and etc. These may be usedalone or in a combination thereof. An upper surface of the secondinsulation layer 280 may be flat.

According to an exemplary embodiment illustrated with reference to FIG.2, the touch display apparatus includes the second insulation layer 280including the organic insulation material. Thus, when the touch displaypanel is a flexible touch display panel, a risk of the touch displaypanel from being broken may be lower than a touch display panel having asecond insulation layer including an inorganic insulation material.

FIG. 4 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

Referring to FIG. 4, the touch display panel is substantially the sameas the touch display panel of FIGS. 1 and 2, except for an opening in asecond insulation layer 180. Thus, detailed descriptions with respect tothe substantially the same elements will be briefly explained oromitted.

The touch display panel may include a thin-film transistor substrate110, a pixel electrode 112, a pixel defining layer 114, a light emittingstructure 120, a thin film encapsulation layer 130, a buffer pattern140, a first metal pattern 150, a first insulation pattern 160, a secondmetal pattern 170, a contacting pad 172, and a second insulation layer180.

The thin-film transistor substrate 110 may be a substrate includingthin-film transistors and signal lines for driving pixels to display animage. The pixel electrode 112 may be disposed to correspond to a pixelon the thin-film transistor substrate 110. The pixel defining layer 114may be disposed on the thin-film transistor substrate 110 on which thepixel electrode 112 is disposed. The light emitting structure 120 may bedisposed on a portion of the pixel electrode 112 exposed by an openingof the pixel defining layer 114. An opposite electrode (not shown) maybe formed on the light emitting structure 120. The thin filmencapsulation layer 130 may be disposed on the light emitting structure120 and the pixel defining layer 114.

The touch display panel 100 may include a touch area TA that may detecta touch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel 100. The bufferpattern 140 may be disposed on the thin film encapsulation layer 130.

The first metal pattern 150 may be disposed on the buffer pattern 140.The first metal pattern 150 may be disposed in the touch area TA. In aplan view, the first metal pattern 150 may have substantially the sameshape as the buffer pattern 140.

The first insulation pattern 160 may be disposed on the first metalpattern 150 in the touch area TA. In a plan view, the first insulationpattern 160 may have substantially the same shape as the first metalpattern 150. The first insulation pattern 160 may define a first contacthole CNT1 exposing the first metal pattern 150.

The second metal pattern 170 may be disposed on the first insulationpattern 160 in the touch area TA. The second metal pattern 170 may beelectrically connected to the first metal pattern 150 through the firstcontact hole CNT1 of the first insulation pattern 160.

The contacting pad 172 may be disposed on the thin film encapsulationlayer 130 in the peripheral area PA. The contacting pad 172 may beformed from the same layer as the second metal pattern 170. As such, thecontacting pad 172 may include the same material as the second metalpattern 170.

The second insulation layer 180 may be disposed on the thin filmencapsulation layer 130 on which the second metal pattern 170 and thecontacting pad 172 are disposed. The second insulation layer 180 maycover both the first metal pattern 150 and the second metal pattern 170in the touch area TA. The second insulation layer 180 may define asecond contact hole CNT2 which exposes the contacting pad 172 in theperipheral area PA. A driving circuit may be electrically connected to atouch circuit of the touch display panel 100 through the second contacthole CNT2. The second insulation layer 180 may include an inorganicinsulation material. For example, the second insulation layer 180 mayinclude silicon oxide (SiO_(x)), silicon nitride (SiN_(x)), and etc.

The second insulation layer 180 may define an opening OP correspondingto the light emitting structure 120. The touch display panel may be aflexible touch display apparatus, and a plurality of the openings OP maybe formed through the second insulation layer 180. As such, even whenthe touch display panel is bent, damage to the second insulation layer180 may be minimized.

FIG. 5 is a cross-sectional view illustrating a touch display panelaccording to an exemplary embodiment.

Referring to FIG. 5, the touch display panel is substantially the sameas the touch display panel of FIG. 3, except for an opening OP in asecond insulation layer 280. Thus, detailed descriptions with respect tosubstantially the same elements will be briefly explained or omitted.

The touch display panel may include a thin-film transistor substrate210, a pixel electrode 212, a pixel defining layer 214, a light emittingstructure 220, a thin film encapsulation layer 230, a buffer pattern240, a first metal pattern 250, a first insulation pattern 260, a secondmetal pattern 270, a contacting pad 272, and a second insulation layer280.

The thin-film transistor substrate 210 may a substrate includingthin-film transistors and signal lines for driving pixels to display animage. The pixel electrode 212 may be disposed to correspond to a pixelon the thin-film transistor substrate 210. The pixel defining layer 214may be disposed on the thin-film transistor substrate 210 on which thepixel electrode 212 is disposed. The light emitting structure 220 may bedisposed on a portion of the pixel electrode 212 exposed by an openingof the pixel defining layer 214. An opposite electrode (not shown) maybe formed on the light emitting structure 220. The thin filmencapsulation layer 230 may be disposed on the light emitting structure220 and the pixel defining layer 214.

The touch display panel may include the touch area TA that may detect atouch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel. The buffer pattern240 may be disposed on the thin film encapsulation layer 230 in thetouch area TA.

The first metal pattern 250 may be disposed on the buffer pattern 240 inthe touch area TA. In a plan view, the first metal pattern 250 may havesubstantially the same shape as the buffer pattern 240.

The first insulation pattern 260 may be disposed on the first metalpattern 250. In a plan view, the first insulation pattern 260 may havesubstantially the same shape as the first metal pattern 250. The firstinsulation pattern 260 may define a first contact hole CNT1 exposing thefirst metal pattern 250. The first insulation pattern 260 may include anorganic insulation material.

The second metal pattern 270 may be disposed on the first insulationpattern 260. The second metal pattern 270 may be electrically connectedto the first metal pattern 250 through the first contact hole CNT1 ofthe first insulation pattern 260.

The contacting pad 272 may be disposed on the thin film encapsulationlayer 230. The contacting pad 272 may be disposed in the peripheral areaPA. The contacting pad 272 may be formed from the same layer as thesecond metal pattern 270. As such, the contacting pad 272 may includethe same material as the second metal pattern 270.

The second insulation layer 280 may be disposed on the thin filmencapsulation layer 230 on which the second metal pattern 270 and thecontacting pad 272 are disposed. The second insulation layer 280 maycover both the first metal pattern 250 and the second metal pattern 270in the touch area TA. The second insulation layer 280 may define asecond contact hole CNT2 which exposes the contacting pad 272 in theperipheral area PA. The second insulation layer 280 may include anorganic insulation material. An upper surface of the second insulationlayer 280 may be flat.

The second insulation layer 280 may define an opening OP correspondingto the light emitting structure 220. The touch display panel may be aflexible touch display apparatus, and a plurality of the openings OP maybe formed through the second insulation layer 280. As such, when thetouch display panel is bent, damage to the second insulation layer 280may be minimized.

FIGS. 6A to 6I are cross-sectional views illustrating a method ofmanufacturing the touch display panel of FIG. 2.

Referring to FIG. 6A, a pixel electrode 112, a pixel defining layer 114,and a thin film encapsulation layer 130 may be formed on a thin-filmtransistor substrate 110. The thin-film transistor substrate 110, thepixel electrode 112, the pixel defining layer 114, and the thin filmencapsulation layer 130 may be formed by various methods known in theart.

The touch display panel 100 may include a touch area TA that may detecta touch position, and a peripheral area PA which is adjacent to thetouch area TA and disposed at an edge of the touch display panel 100.

A buffer layer 140′ may be formed on the thin film encapsulation layer130. The buffer layer 140′ may include an inorganic insulation material.The buffer layer 140′ may be formed by a spin coating process, achemical vapor deposition (CVD) process, a plasma enhanced chemicalvapor deposition (PECVD) process, a high density plasma-chemical vapordeposition (HDP-CVD) process, a printing process, and etc.

A first metal layer 150′ may be formed on the buffer layer 140′. Thefirst metal layer 150′ may include metal such as gold (Au), silver (Ag),copper (Cu), nickel (Ni), iron (Fe), cobalt (Co), zinc (Zn), chromium(Cr), manganese (Mn), or combinations thereof. The first metal layer150′ may be formed by a printing process, a sputtering process, a CVDprocess, a pulsed laser deposition (PLD) process, a vacuum evaporationprocess, an atomic layer deposition (ALD) process, and etc.

A first insulation layer 160′ may be formed on the first metal layer150′. The first insulation layer 160′ may include an inorganicinsulation material. The first insulation layer 160′ may be formed by aspin coating process, a CVD process, a PECVD process, a HDP-CVD process,a printing process, and etc.

Referring to FIG. 6B, a first photoresist pattern PR1 may be formed onthe first insulation layer 160′. The first photoresist pattern PR1 mayinclude a first portion having a first height a1 and a second portionhaving a second height a2. The first height a1 may be greater than thesecond height a2. The first photoresist pattern PR1 may be formed usinga half tone mask and the like. For example, a photoresist layer may beformed on the first insulation layer 160′, and then the firstphotoresist pattern PR1 may be formed by exposing the photoresist layerwith the halftone mask and developing the photoresist layer.

Referring to FIG. 6C, a buffer pattern 140, a first metal pattern 150,and a first insulation pattern 160 may be formed by patterning thebuffer layer 140′, the first metal layer 150′, and the first insulationlayer 160′. The buffer pattern 140, the first metal pattern 150, and thefirst insulation pattern 160 may be formed by pattering the buffer layer140′, the first metal layer 150′, and the first insulation layer 160′using the first photoresist pattern PR1 as a mask. For example, usingthe first photoresist pattern PR1 as an etch barrier, the buffer layer140′, the first metal layer 150′, and the first insulation layer 160′may be dry or wet etched.

Referring to FIG. 6D, the second portion of the first photoresistpattern PR1 may be removed. For example, the second portion of the firstphotoresist pattern PR1 may be removed by removing the overall portionsof the first photoresist pattern PR1 using ashing process and the like.Accordingly, the first photoresist pattern PR1 may expose a portion ofthe first insulation pattern 160.

Referring to FIG. 6E, a first contact hole CNT1 may be formed throughthe first insulation pattern 160. Using the first photoresist patternPR1 as a mask, the exposed portion of the first insulation pattern 160may be removed. For example, the first insulation pattern 160 may beetched using the first photoresist pattern PR1 as an etch barrier, sothat the first contact hole CNT1 may be formed. And then, the firstphotoresist pattern PR1 may be removed. For example, remaining of thefirst photoresist pattern PR1 may be removed by stripping process andthe like.

Referring to FIG. 6F, a second metal layer 170′ may be formed on thethin film encapsulation layer 130 and the first insulation pattern 160formed with the first contact hole CNT1. The second metal layer 170′ mayinclude metal such as gold (Au), silver (Ag), copper (Cu), nickel (Ni),iron (Fe), cobalt (Co), zinc (Zn), chromium (Cr), manganese (Mn), orcombinations thereof. The second metal layer 170′ may be formed by aprinting process, a sputtering process, a CVD process, a pulsed laserdeposition (PLD) process, a vacuum evaporation process, an atomic layerdeposition (ALD) process, and etc.

Referring to FIG. 6G, a second photoresist pattern PR2 may be formed onthe second metal layer 170′. For example, a photoresist layer may beformed on the second metal layer 170′, and then the second photoresistpattern PR2 may be formed by exposing the photoresist layer using a maskand developing the photoresist layer.

Referring to FIG. 6H, a second metal pattern 170 and a contacting pad172 may be formed by patterning the second metal layer 170′. The secondmetal pattern 170 and the contacting pad 172 may be formed by patteringthe second metal layer 170′ using the second photoresist pattern PR2 asa mask. For example, using the second photoresist pattern PR2 as an etchbarrier, the second metal layer 170′ may be dry or wet etched.

Referring to FIG. 6I, the second photoresist pattern PR2 may be removed.For example, remaining of the second photoresist pattern PR2 may beremoved by stripping process and the like.

Referring to FIG. 6J, a second insulation layer 180 may be formed on thethin film encapsulation layer 130 on which the second metal pattern 170and the contacting pad 172 are formed. The second insulation layer 180may include an inorganic insulation material. The second insulationlayer 180 may be formed by a spin coating process, a CVD process, aPECVD process, a HDP-CVD process, a printing process, and etc.

Referring to FIG. 6K, a third photoresist pattern PR3 may be formed onthe second insulation layer 180. The third photoresist pattern PR3 mayexpose a portion of the second insulation layer 180. For example, aphotoresist layer may be formed on the second insulation layer 180, andthen the third photoresist pattern PR3 may be formed by exposing thephotoresist layer using a mask and developing the photoresist layer.

Referring to FIG. 6L, a second contact hole CNT2 exposing the contactingpad 172 may be formed through the second insulation layer 180. Using thethird photoresist pattern PR3 as a mask, the exposed portion of thesecond insulation layer 180 may be removed. For example, the secondinsulation layer 180 may be etched using the third photoresist patternPR3 as an etch barrier, so that the second contact hole CNT2 may beformed. And then, the third photoresist pattern PR3 may be removed. Forexample, remaining of the third photoresist pattern PR3 may be removedby stripping process and the like.

FIGS. 7A to 7H are cross-sectional views illustrating a method ofmanufacturing the touch display panel of FIG. 3.

Referring to FIG. 7A, a pixel electrode 212, a pixel defining layer 214,and a thin film encapsulation layer 230 may be formed on a thin-filmtransistor substrate 210. The thin-film transistor substrate 210, thepixel electrode 212, the pixel defining layer 214, and the thin filmencapsulation layer 230 may be formed by various methods known in theart.

The touch display panel may include a touch area TA that may detect atouch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel.

A buffer layer 240′ may be formed on the thin film encapsulation layer230. The buffer layer 240′ may include an inorganic insulation material.A first metal layer 250′ may be formed on the buffer layer 240′. Thefirst metal layer 250′ may include metal such as gold (Au), silver (Ag),copper (Cu), nickel (Ni), iron (Fe), cobalt (Co), zinc (Zn), chromium(Cr), manganese (Mn), or combinations thereof.

A first preliminary insulation pattern 260′ may be formed on the firstmetal layer 250′. The first preliminary insulation pattern 260′ mayinclude an organic insulation material. For example the first insulationpattern 260′ may include photoresist, acryl-based resin, polyimide-basedresin, polyamide-based resin, siloxane-based resin, and etc. These maybe used alone or in a combination thereof.

The first preliminary insulation pattern 260′ may include a firstportion having a first height b1 and a second portion having a secondheight b2. The first height b1 may be greater than the second height b2.The first preliminary insulation pattern 260′ may be formed using a halftone mask and the like. For example, a photoresist layer may be formedon the first metal layer 250′, and then the first preliminary insulationpattern 260′ may be formed by exposing the photoresist layer using thehalftone mask and developing the photoresist layer.

Referring to FIG. 7B, a buffer pattern 240 and a first metal pattern 250may be formed by patterning the buffer layer 240′ and the first metallayer 250′. The buffer pattern 240 and the first metal pattern 250 maybe formed by pattering the buffer layer 240′ and the first metal layer250′ by using the first preliminary insulation pattern 260′ as a mask.For example, using the first preliminary insulation pattern 260′ as anetch barrier, the buffer layer 240′ and the first metal layer 250′ maybe dry or wet etched.

Referring to FIG. 7C, a first contact hole CNT1 may be formed byremoving the second portion of the first preliminary insulation pattern260′. Accordingly, a first insulation pattern 260 having the firstcontact hole CNT1 may be formed. For example, the second portion of thefirst preliminary insulation pattern 260′ may be removed by removing theoverall portions of the first preliminary insulation pattern 260′ usingashing process and the like. Accordingly, the first contact hole CNT1exposing a portion of the first metal pattern 250 may be formed.

Referring to FIG. 7D, a second metal layer 270′ may be formed on thefirst insulation pattern 260 having the first contact hole CNT1 and thethin film encapsulation layer 230.

Referring to FIG. 7E, a second photoresist pattern PR2 may be formed onthe second metal layer 270′.

Referring to FIG. 7F, a second metal pattern 270 and a contacting pad272 may be formed by patterning the second metal layer 270′. The secondmetal pattern 270 and the contacting pad 272 may be formed by patteringthe second metal layer 270′ using the second photoresist pattern PR2 asa mask.

Referring to FIG. 7G, remaining portions of the second photoresistpattern PR2 may be removed.

Referring to FIG. 7H, a second insulation layer 280 may be formed on thethin film encapsulation layer 230 on which the second metal pattern 270and the contacting pad 272 are formed. The second insulation layer 280may have a second contact hole CNT2 which exposes the contacting pad272. The second insulation layer 280 may include an inorganic insulationmaterial. For example, a photoresist layer may be formed on the secondmetal pattern 270, the contacting pad 272, and the thin filmencapsulation layer 230, and then the second insulation layer 280 may beformed by exposing the photoresist layer by using a mask and developingthe photoresist layer. Thus, second insulation layer 280 having thesecond contact hole CNT2 may be formed.

FIGS. 8A to 8C are cross-sectional views illustrating a method ofmanufacturing the touch display panel of FIG. 4.

Referring to FIG. 8A, the method of manufacturing the touch displaypanel is substantially the same as the method of manufacturing the touchdisplay panel illustrated in FIGS. 6A to 6L, expect for forming anopening OP in a second insulation layer 180. Thus, detailed descriptionswith respect to the substantially the same processes will be brieflyexplained or omitted.

A pixel electrode 112, a pixel defining layer 114, and a thin filmencapsulation layer 130 may be formed on a thin-film transistorsubstrate 110. The thin-film transistor substrate 110, the pixelelectrode 112, the pixel defining layer 114, and the thin filmencapsulation layer 130 may be formed by various methods known in theart.

The touch display panel may include a touch area TA that may detect atouch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel.

A buffer pattern 140, a first metal pattern 150, a first insulationpattern 160 having a first contact hole CNT1, a second metal pattern170, and a contacting pad 172 may be formed on the thin filmencapsulation layer 130. The second insulation layer 180 may include aninorganic insulation material.

Referring to FIG. 8B, a third photoresist pattern PR3 may be formed onthe second insulation layer 180. The third photoresist pattern PR3 mayexpose a portion of the second insulation layer 180. For example, aphotoresist layer may be formed on the second insulation layer 180, andthen the third photoresist pattern PR3 may be formed by exposing thephotoresist layer by using a mask and developing the photoresist layer.

Referring to FIG. 8C, a second contact hole CNT2 exposing the contactingpad 172 may be formed through the second insulation layer 180, and anopening OP that corresponds to the light emitting structure 120 may beformed through the second insulation layer 180. Using the thirdphotoresist pattern PR3 as a mask, the exposed portion of the secondinsulation layer 180 may be removed. For example, the second insulationlayer 180 may be etched using the third photoresist pattern PR3 as anetch barrier, so that the second contact hole CNT2 and the opening OPmay be formed. And then, the third photoresist pattern PR3 may beremoved. For example, remaining portions of the third photoresistpattern PR3 may be removed by stripping process and the like.

FIGS. 9A and 9B are cross-sectional views illustrating a method ofmanufacturing the touch display panel of FIG. 5.

Referring to FIG. 9A, the method of manufacturing the touch displaypanel is substantially same as the method of manufacturing the touchdisplay panel illustrated in FIGS. 7A to 7H, expect for forming anopening OP in a second insulation layer 280. Thus, detailed descriptionswith respect to the substantially the same processes will be brieflyexplained or omitted.

A pixel electrode 212, a pixel defining layer 214, and a thin filmencapsulation layer 230 may be formed on a thin-film transistorsubstrate 210. The thin-film transistor substrate 210, the pixelelectrode 212, the pixel defining layer 214, and the thin filmencapsulation layer 230 may be formed by various methods known in theart.

The touch display panel may include a touch area TA that may detect atouch position, and a peripheral area PA adjacent to the touch area TAand disposed at an edge of the touch display panel.

A buffer pattern 240, a first metal pattern 250, a first insulationpattern 260 having a first contact hole CNT1, a second metal pattern270, and a contacting pad 272 may be formed on the thin filmencapsulation layer 230.

Referring to FIG. 9B, a second insulation layer 280 may be formed on thethin film encapsulation layer 230 on which the second metal pattern 270and the contacting pad 272 are formed. The second insulation layer 280may have a second contact hole CNT2 exposing the contacting pad 272, andan opening OP that corresponds to the light emitting structure 220. Thesecond insulation layer 280 may include an organic insulation material.For example, a photoresist layer may be formed on the second metalpattern 270, the contacting pad 272, and the thin film encapsulationlayer 230, and then the second insulation layer 280 having the secondcontact hole CNT2 and the opening OP may be formed by exposing thephotoresist layer by using a mask and developing the photoresist layer.

According to exemplary embodiments, the buffer pattern, the first metalpattern, and the first insulation pattern of the touch display panel maybe formed by using the same mask. Thus, the touch display panel has asimple structure as compared to that of a conventional touch displaypanel, and thus, manufacturing productivity may be improved.

In addition, the first insulation pattern may not overlap a pixelstructure. As such, the thickness of the touch display panelcorresponding to the pixel structure may be reduced, which may improvebendability of the touch display panel and the transmittance thereof.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concept is not limitedto such embodiments, but rather to the broader is scope of the presentedclaims and various obvious modifications and equivalent arrangements.

What is claimed is:
 1. A touch display panel, comprising: a thin-filmtransistor substrate comprising a thin-film transistor; a pixel defininglayer disposed on the thin-film transistor substrate and comprising afirst opening; a light emitting structure disposed in the first opening;a thin film encapsulation layer covering the light emitting structureand the pixel defining layer; a first metal pattern disposed on the thinfilm encapsulation layer; a first insulation pattern disposed on thefirst metal pattern and having the same shape same as the first metalpattern in a plan view; a second metal pattern disposed on the firstinsulation pattern; and a second insulation layer disposed on the secondmetal pattern and the thin film encapsulation layer and covering thefirst metal pattern, the first insulation pattern, and the second metalpattern.
 2. The touch display panel of claim 1, wherein the first metalpattern overlaps the pixel defining layer.
 3. The touch display panel ofclaim 2, wherein the second metal pattern overlaps the pixel defininglayer.
 4. The touch display panel of claim 1, wherein: a first contacthole is formed through the first insulation pattern; and the secondmetal pattern is electrically connected to the first metal patternthrough the first contact hole.
 5. The touch display panel of claim 1,wherein the second insulation layer comprises a second openingoverlapping the light emitting structure.
 6. The touch display panel ofclaim 1, wherein the first insulation pattern and the second insulationlayer comprise an inorganic insulation material.
 7. The touch displaypanel of claim 1, wherein the first insulation pattern and the secondinsulation layer comprise an organic insulation material.
 8. The touchdisplay panel of claim 1, wherein: the touch display panel comprises: atouch area and a peripheral area adjacent to the touch area; and acontacting pad disposed in the peripheral area; the second insulationlayer comprises a second contact hole exposing a portion of thecontacting pad; and the first and second metal patterns are disposed inthe touch area.
 9. The touch display panel of claim 1, furthercomprising a buffer pattern disposed on the thin film encapsulationlayer, wherein the first metal pattern is disposed on the buffer patternand has the same shape same as the buffer pattern in a plan view.
 10. Amethod of manufacturing a touch display panel, comprising: providing athin-film transistor substrate; forming a pixel defining layercomprising a first opening on the thin-film transistor substrate;forming a light emitting structure in the first opening; forming a thinfilm encapsulation layer covering the light emitting structure and thepixel defining layer; forming a first metal layer and a first insulationlayer on the thin film encapsulation layer; forming a first photoresistpattern comprising a first portion having a first height and a secondportion having a second height less than the first height on the firstinsulation layer; forming a first metal pattern and a first insulationpattern by patterning the first metal layer and the first insulationlayer using the first photoresist pattern; and forming a second metalpattern on the thin film encapsulation layer on which the firstinsulation pattern is formed.
 11. The method of claim 10, whereinforming the first metal pattern and the first insulation patterncomprises patterning the first metal layer and the first insulationlayer using the first photoresist pattern as an etch barrier, such thatthe first metal pattern and the first insulation pattern have the sameshape in a plan view.
 12. The method of claim 11, wherein forming thefirst metal pattern and the first insulation pattern further comprises:removing a portion of the first photoresist pattern such that the secondportion is removed while a portion of the first portion is remained,after forming the first metal pattern and the first insulation pattern;and etching the first insulation layer using the remaining portion ofthe first photoresist pattern as a mask, such that a first contact holeexposing the first metal pattern is formed.
 13. The method of claim 10,further comprising forming a second insulation layer on the second metalpattern.
 14. The method of claim 13, wherein: the touch display panelcomprises: a touch area and a peripheral area adjacent to the toucharea; and a contacting pad disposed in the peripheral area; the secondinsulation layer comprises a second contact hole exposing the contactingpad; and the first and second metal patterns are disposed in the toucharea.
 15. The method of claim 13, wherein the first insulation patternand the second insulation layer comprise an inorganic insulationmaterial.
 16. The method of claim 15, further comprising forming asecond opening through the second insulation layer to overlap the lightemitting structure.
 17. The method of claim 13, wherein the firstinsulation pattern and the second insulation layer comprise an organicinsulation material.
 18. The method of claim 17, wherein forming thesecond insulation layer comprises: forming a photoresist layer on asecond metal layer forming the second metal pattern; and exposing anddeveloping the photoresist layer, such that a second opening thatoverlaps the light emitting structure is formed in the second insulationlayer.
 19. The method of claim 10, further comprising forming a bufferlayer on the thin film encapsulation layer before forming the firstmetal layer, wherein forming the first metal pattern and the firstinsulation pattern comprises patterning the buffer layer, the firstmetal layer, and the first insulation layer using the first photoresistpattern, to form a buffer pattern, the first metal pattern, and thefirst insulation pattern, respectively.
 20. The method of claim 10,wherein the first and second metal patterns overlap the pixel defininglayer.